Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system

We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $\rho_{xx}$ has an activated temperature dependence. The angle of the magnetic field was controlled so as to study the orbital effect proportional to the perpendicular component $B_\perp$ for various total strengths $B_{\rm tot}$. A dip in $\rho_{xx}$, which corresponds to the Landau level filling factor of $\nu=4$, survives even for high resistivity of $\rho_{xx} \sim 10^8 \Omega$ at $T= 150 {\rm mK}$. The linear $B_{\rm tot}$-dependence of the value of $B_\perp$ at the dip for low $B_{\rm tot}$ indicates that a ferromagnetic instability does not occur even in the far insulating regime.Comment: 6 pages, 7 figures, submitted to PR

Inversion phenomenon and phase diagram of the S=1/2S=1/2 distorted diamond chain with the XXZXXZ interaction anisotropy

We discuss the anisotropies of the Hamiltonian and the wave-function in an $S=1/2$ distorted diamond chain. The ground-state phase diagram of this model is investigated using the degenerate perturbation theory up to the first order and the level spectroscopy analysis of the numerical diagonalization data. In some regions of the obtained phase diagram, the anisotropy of the Hamiltonian and that of the wave-function are inverted, which we call inversion phenomenon; the N\'{e}el phase appears for the XY-like anisotropy and the spin-fluid phase appears for the Ising-like anisotropy. Three key words are important for this nature, which are frustration, the trimer nature, and the $XXZ$ anisotropy.Comment: 4pages, 10 figures, for proceedings of SPQS 200

Critical Properties of the transition between the Haldane phase and the large-D phase of the spin-1/2 ferromagnetic-antiferromagnetic Heisenberg chain with on-site anisotropy"

We analytically study the ground-state quantum phase transition between the Haldane phase and the large-$D$ (LD) phase of the $S=1/2$ ferromagnetic-antiferromagnetic alternating Heisenberg chain with on-site anisotropy. We transform this model into a generalized version of the alternating antiferromagnetic Heisenberg model with anisotropy. In the transformed model, the competition between the transverse and longitudinal bond alternations yields the Haldane-LD transition. Using the bosonization method, we show that the critical exponents vary continuously on the Haldane-LD boundary. Our scaling relations between critical exponents very well explains the numerical results by Hida.Comment: text 12 pages (Plain TeX), LaTeX sourse files of a table and a figure on reques

Equivalent hyperon-nucleon interactions in low-momentum space

Equivalent interactions in a low-momentum space for the $\Lambda N$, $\Sigma N$ and $\Xi N$ interactions are calculated, using the SU$_6$ quark model potential as well as the Nijmegen OBEP model as the input bare interaction. Because the two-body scattering data has not been accumulated sufficiently to determine the hyperon-nucleon interactions unambiguously, the construction of the potential even in low-energy regions has to rely on a theoretical model. The equivalent interaction after removing high-momentum components is still model dependent. Because this model dependence reflects the character of the underlying potential model, it is instructive for better understanding of baryon-baryon interactions in the strangeness sector to study the low-momentum space $YN$ interactions.Comment: 9 pages, 13 figures, accepted for publication in Phys. Rev.

Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.Comment: 3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13

Theory of Mott insulator/band insulator heterostructure

A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric fields arising from the La$^{3+}$/Sr$^{2+}$ charge difference and the carriers are treated within a Hartree approximation; and the on-site interactions are treated by unrestricted Hartree-Fock. The phase diagram as a function of interaction strength and layer number is determined and predictions are made for optical conductivity experiments. A note worthy finding is that the edges of the heterostructure are generally metallic.Comment: 11 pages, 9 figure

A remark on the Hankel determinant formula for solutions of the Toda equation

We consider the Hankel determinant formula of the $\tau$ functions of the Toda equation. We present a relationship between the determinant formula and the auxiliary linear problem, which is characterized by a compact formula for the $\tau$ functions in the framework of the KP theory. Similar phenomena that have been observed for the Painlev\'e II and IV equations are recovered. The case of finite lattice is also discussed.Comment: 14 pages, IOP styl